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2N3811

Semicoa Semiconductor

PNP Transistor

Data Sheet No. 2N3811 Type 2N3811 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: • • • • Two electrically ...


Semicoa Semiconductor

2N3811

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Data Sheet No. 2N3811 Type 2N3811 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/336 which Semicoa meets in all cases. Generic Part Number: 2N3810 REF: MIL-PRF-19500/336 TO-78 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25 C, one section Derate above 25oC Power Dissipation, TA = 25oC, two sections Derate above 25 C Operating Junction Temperature Storage Temperature o o Symbol VCEO VCBO VEBO IC PT Rating 60 60 5.0 50 0.5 2.86 Unit V V V mA W mW/oC W mW/ C o o PT 0.6 3.43 TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3811 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IC = 10 µA Collector-Base Cutoff Current VCB = 50 V Collector-Base Cutoff Current VCB = 50 V, TA = +150 C Collector-Base Cuttoff Current VCE = 50 V, IC = 1 µA o Symbol V(BR)CBO Min 60 Max --- Unit V V(BR)CEO 60 --- V V(BR)EBO 5.0 --- V ICBO1 --- 10 nA ICBO2 --- 10 µA IEBO --- 10 nA ON Characteristics Forward Current Transfer Ratio IC = 1 µA, VCE = 5 V...




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