AON6850

AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 28A < 35mΩ < 42mΩ 100% UIS Tested 100% Rg Tested Top View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D2 D1 D1 D2 D2 G1 S1 G2 S2 DFN5X6 EP2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 100 ±25 28 18 55 5 4 28 39 56 22 1.7 1.1 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 20 60 1.8 Max 24 72 2.2 Units °C/W °C/W °C/W Rev 0: Feb 2010 www.aosmd.com Page 1 of 1 Free Datasheet http://www.datasheet4u.com/ AON6850 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter S...