AON6816

AON6816 30V Dual N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Application DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 16A < 6.2mΩ < 9.6mΩ HBM Class 2 DFN5X6 EP2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Continuous Drain TA=25°CG Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C ID IDM IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 16 16 64 16 14 35 31 36 21 8 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 35 65 5 Max 45 80 6 D2 S2 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Vo...