AON6526

AON6526 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 7mΩ < 9mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 32 25 110 24 19 34 29 36 25 10 6 3.8 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 44 3.5 Max 21 53 5 Units ° C/W ° C/W ° C/W Rev0: Sep 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6526 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Condition...