N-Channel MOSFET
AON6506
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Description
AON6506
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 36A < 2.6mΩ < 3.8mΩ
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
8 7 6 5
D
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A
C
Maximum 30 ±20 36 28 144 33 26 60 90 36 83 33 4.2 2.7 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C
A A mJ V W W ° C
Avalanche energy L=0.05mH C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 24 53 1.2
Max 30 64 1.5
Units ° C/W ° C/W ° C/W
Rev 0: Feb. 2012
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AON6506
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter ...
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