AON6502

AON6502 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.2mΩ < 2.7mΩ Applications DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial See Note I 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 100ns TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 66 334 49 39 70 123 36 83 33 7.4 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 1: September 2017 www.aosmd.com Page 1 of 6 AON6502 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ...