AON6500

AON6500 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 370A < 0.95mW < 1.3mW Applications DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial See Note I 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View Top View S1 8D S2 7D S3 6D G4 5D G PIN1 PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current (Silicon) TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG Maximum 30 ±20 370 230 800 71 57 50 125 36 208 83 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State Symbol RqJA RqJC Typ 14 40 0.46 Max 17 55 0.6 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 2.0: March 2022 www.aosmd.com Page 1 of 6 AON6500 Electrical Characteristics (TJ=25°C unless otherwise noted) Symb...