AON6458

AON6458 250V,14A N-Channel MOSFET General Description The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 300V@150℃ 14A < 0.17Ω 100% UIS Tested! 100% Rg Tested! DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D PIN1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Continuous Drain Current Avalanche Current C C Maximum 250 ±30 14 8.8 42 2.2 1.7 4.5 304 608 5 83 33 2 1.25 -50 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR EAS dv/dt PD PDSM TJ, TSTG A A mJ mJ V/ns W W W °C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA R...