N-Channel MOSFET
AON6454A
150V N-Channel MOSFET
General Description
The AON6454A combines advanced trench MOSFET technology with a low r...
Description
AON6454A
150V N-Channel MOSFET
General Description
The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=7V) 150V 31A < 38mΩ < 44mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
D
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C
Maximum 150 ±20 31 20 65 5 4.0 12 7 83 33 2.3 1.5 -55 to 150
Units V V A
VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev 0: April 2011
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Free Datasheet http://www.datasheet4u.com/
AON6454A
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=150V, VGS=0...
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