AON6450L

AON6450L N-Channel SDMOS TM Power Transistor General Description The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary Parameter VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 52A < 14.5mΩ < 17.5mΩ - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! D Top View Fits SOIC8 footprint ! G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C C Maximum 100 ±25 52 33 110 9 7 41 84 83 33 2.3 1.4 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units °C/W °C/W °C/W Rev 0: January 2009 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6450L Electrical Characteristics (T J=25°C unless otherwise noted) ...