AON6405L

AON6405L P-Channel Enhancement Mode Field Effect Transistor General Description The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications. Features VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested! -RoHS Compliant -Halogen Free Top View Fits SOIC8 footprint ! S S S G D D D D G Rg D DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C S Maximum -30 ±20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.6 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25°C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient AD Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 17 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON6405L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=...