Document
AON6403
30V P-Channel MOSFET
General Description
The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1mΩ < 4.3mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
D Top View
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation
B C
Maximum -30 ±20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150
Units V V A
VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W ° C
C TC=100° TA=25° C TA=70° C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev 2: November 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AON6403
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-20A IS=-1A,VGS=0V TJ=125° C -1.2 -280 2.6 3.6 3.5 82 -0.7 -1 -85 6100 7600 1320 1050 2 163 79 22 33 13 18 135 52 IF=-20A, dI/dt=500A/µs 21 63 26 78 32 94 9120 1720 1470 4 196 95 26 46 3.1 4.4 4.3 -1.7 Min -30 -1 -5 ±100 -2.2 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
930 630 1 130
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
VGS=-10V, VDS=-15V, ID=-20A
63 18 20
VGS=-10V, VDS=-15V,
RL=0.75Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150° C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initial TJ =25° C.Maximum UIS current limited by test equipment . D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C. Rev 2: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: November 2010
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 -3.5V 120 -4V -10V -ID (A) 90 -ID(A) -3V 90 150 VDS=-5V 120
60
60 125° C 25° C
30
VGS=-2.5V
30
0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 Normalized On-Resistance
0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E)
1.6 VGS=-10V ID=-20A 1.4
4 RDS(ON) (mΩ )
VGS=-4.5V
3
1.2
2
VGS=-10V
1
17 5 VGS=-4.5V 2 ID=-20A .