N-Channel MOSFET
AON6400
30V N-Channel MOSFET
General Description
The AON6400 combines advanced trench MOSFET technology with a low resi...
Description
AON6400
30V N-Channel MOSFET
General Description
The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.4mΩ < 1.8mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
D Top View
8 7 6 5
G
PIN1
S
Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
Maximum 30 ±20 85 67 400 31 25 90 405 83 33 2.3 1.45 -55 to 150
Units V V A
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev 1 : November 2010
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Free Datasheet http://www.datasheet4u.com/
AON6400
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS...
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