Document
AON6292
100V N-Channel MOSFET
General Description
Product Summary
• The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
• RoHS and Halogen-Free Compliant
100% UIS Tested 100% Rg Tested
100V 85A < 6mΩ < 8.5mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 85 67 220 24 20 50 125 156 62.5 7.3 4.7
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 40 0.55
Max 17 55 0.8
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev 1.0: February 2016
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Page 1 of 6
AON6292
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=100V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A
VGS=6V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
100
TJ=55°C 2.2 220
TJ=125°C
V
1 µA
5
±100 nA
2.8 3.4
V
A
4.8 6 mΩ
8.6 10.8
6 8.5 mΩ
60 S
0.7 1
V
85 A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz
3830 327 16.5 0.3 0.65 1.0
pF pF pF Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
45 63 nC
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
15.5 22 16
nC nC
Qgd Gate Drain Charge
7 nC
tD(on)
Turn-On DelayTime
13 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5Ω, 4 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
26 ns
tf Turn-Off Fall Time
4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
19 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
225 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1.0: February 2016
www.aosmd.com
Page 2 of 6
AON6292
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V
80
7V
100 5V VDS=5V
80
60 60
ID(A)
ID (A)
40 4.5V
20 VGS=4.0V
0 01234
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
5
10
8 VGS=6V
6
4 VGS=10V
2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltag.