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AON6292 Dataheets PDF



Part Number AON6292
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6292 DatasheetAON6292 Datasheet (PDF)

AON6292 100V N-Channel MOSFET General Description Product Summary • The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at.

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AON6292 100V N-Channel MOSFET General Description Product Summary • The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested 100V 85A < 6mΩ < 8.5mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 85 67 220 24 20 50 125 156 62.5 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 0.55 Max 17 55 0.8 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: February 2016 www.aosmd.com Page 1 of 6 AON6292 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G 100 TJ=55°C 2.2 220 TJ=125°C V 1 µA 5 ±100 nA 2.8 3.4 V A 4.8 6 mΩ 8.6 10.8 6 8.5 mΩ 60 S 0.7 1 V 85 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3830 327 16.5 0.3 0.65 1.0 pF pF pF Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 45 63 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A 15.5 22 16 nC nC Qgd Gate Drain Charge 7 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2.5Ω, 4 ns tD(off) Turn-Off DelayTime RGEN=3Ω 26 ns tf Turn-Off Fall Time 4.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 225 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1.0: February 2016 www.aosmd.com Page 2 of 6 AON6292 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 7V 100 5V VDS=5V 80 60 60 ID(A) ID (A) 40 4.5V 20 VGS=4.0V 0 01234 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 10 8 VGS=6V 6 4 VGS=10V 2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltag.


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