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MGA-43728 Dataheets PDF



Part Number MGA-43728
Manufacturers AVAGO
Logo AVAGO
Description Linear Power Amplifier Module
Datasheet MGA-43728 DatasheetMGA-43728 Datasheet (PDF)

MGA-43728 2.62–2.69 GHz Linear Power Amplifier Module Data Sheet Description The Avago MGA-43728 is a fully matched, highly linear power amplifier (PA) designed for use in the 2.62–2.69 GHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain and power-added efficiency (PAE) with integrated power detector and shutdown functions. The MGA-43728 is ideal for use as a final stage PA for Small Cell base transceiver station (BTS) applications. Com.

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MGA-43728 2.62–2.69 GHz Linear Power Amplifier Module Data Sheet Description The Avago MGA-43728 is a fully matched, highly linear power amplifier (PA) designed for use in the 2.62–2.69 GHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain and power-added efficiency (PAE) with integrated power detector and shutdown functions. The MGA-43728 is ideal for use as a final stage PA for Small Cell base transceiver station (BTS) applications. Component Image (5.0 × 5.0 × 0.9) mm Package Outline AVAGO 43728 YYWW XXXX TOP VIEW Pin Configuration Notes: Package marking provides orientation and identification ”43728” = Device part number ”YYWW” = Year and work week ”XXXX” = Assembly lot number 28 Vdd1 27 Gnd 26 Vdd2 25 Gnd 24 Vdd3 23 Vdd3 22 Vdd3 Gnd 1 Gnd 2 NC 3 RFin 4 NC 5 Gnd 6 NC 7 (5.0 x 5.0 x 0.9) mm 21 Gnd 20 Gnd 19 RFout 18 RFout 17 RFout 16 Gnd 15 Gnd Features • High linearity performance : Typ -50 dBc ACPR1[1] at 27.0 dBm linear output power (biased with 5.0V supply) • High Gain : 38.8 dB • Good efficiency • Fully matched • Built-in detector • GaAs E-pHEMT Technology [2] • Low cost small package size: (5.0 × 5.0 × 0.9) mm Specifications 2.65 GHz; 5.0 V, Idqtotal = 350 mA (typ), LTE 10 MHz 50 RB • PAE : 13.4% • 27.0 dBm linear Pout @ ACPR1 = -50 dBc[1] • 38.3 dB Gain • Detector range : 20 dB Applications • Final stage high linearity amplifier for Picocell and Enterprise Femtocell PA targeted for small cell BTS downlink applications. Note: 1. LTE 10MHz 50 RB Test Mode 1.1 downlink signal. 2. Enhancement mode technology employs positive VGS, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Functional Block Diagram Vdd1 Vdd2 Vdd3 RFin 1st Stage 2nd Stage 3rd Stage RFout Vc1 8 Vc2 9 Vc3 10 Gnd 11 VddBias 12 Gnd 13 Vdet 14 Biasing Circuit Vc1 Vc2 Vc3 VddBias Vdet Absolute Maximum Rating [1] TA=25°C Symbol Parameter Vdd, VddBias Supply voltages, bias supply voltage Vc Control Voltage Pin,max Pdiss Tj CW RF Input Power Total Power Dissipation [3] Junction Temperature TSTG Storage Temperature Units V V dBm W °C °C Absolute Max. 6.0 (Vdd) 20 7.2 150 -65 to 150 Thermal Resistance [2,3] qjc = 14 °C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra- Red Measurement Technique at Vdd=5.5V operating voltage. 3. Board temperature (TB) is 25 °C , for TB > 49.2 °C derate the device power at 71.4 mW per °C rise in Board (package belly) temperature. Electrical Specifications TA = 25 °C, Vdd1,2,3 = VddBias=5.0V, Idqtotal = 350mA, RF performance at 2.65 GHz, LTE 10MHz 50RB Test model 1.1 downlink signal operation unless otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V 5.0 Idqtotal Quiescent Supply Current mA 350 600 Gain Gain dB 35 38.3 OP1dB Output Power at 1dB Gain Compression dBm 36 ACPR1 @ Pout=27.0 dBm LTE 10MHz 50RB Test Mode 1.1 downlink signal PAE Power Added Efficiency dBc % 12 -50 13.4 S11 Input Return Loss, 50Ω source dB 22 DetR Detector RF dynamic range dB 20 2fo 2fo Harmonics (LTE 10MHz 50RB Test Mode 1.1 downlink signal) dBc -34 2 Product Consistency Distribution Charts [1] LSL LSL 35 36 37 38 39 40 41 Figure 1. Gain at Pout=27.0 dBm; LSL=35.0 dB, Nominal = 38.3dB 12 13 14 15 16 Figure 2. PAE at Pout=27.0 dBm; LSL=12.0% Nominal = 13.4% 600 650 700 750 800 850 Figure 3. Idd_Total at Pout=27.0 dBm, Nominal = 776 mA 900 -60 -56 -52 -48 -44 Figure 4. ACLR1 at Pout=27.0 dBm, Nominal = -50.0 dBc -40 Note: 1. Distribution data sample size is 1700 samples taken from 3 different wafer lots. TA = 25*C, Vdd=VddBias = 5.0V, Vc1=2.2V, Vc2=2.0V, Vc3=2.2V, RF performance at 2.65 GHz, unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 3 MGA-43728 typical over-temperature performance at Vc1=2.2V, Vc2=2.0V, Vc3=2.2V as shown in Figure 27, unless otherwise stated S21,S11,S22/dB 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 –824550°°°CCC 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 S21,S11,S22/dB 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 –824550°°°CCC -40 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 Frequency/GHz Frequency/GHz Figure 5. Small-signal performance Over-temperature Vdd=VddBias=5.0V operating voltage Figure 6. Small-signal performance Over-temperature Vdd=VddBias=5.5V operating voltage PAE/% -36 21 -40 ACLR1_85 °C ACLR1_25 °C ACLR1_-40 °C -44 PAE_85 °C PAE_25 °C PAE_-40 °C 18 15 ACLR1/dBc -48 12 -52 9 -56 6 -60 3 -64 0 17 18 19 20 21 22 23 24 25 26 27 28 29 Pout/dBm Figure 7. Over-temp.


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