Document
MGA-43728 2.62–2.69 GHz Linear Power Amplifier Module
Data Sheet
Description
The Avago MGA-43728 is a fully matched, highly linear power amplifier (PA) designed for use in the 2.62–2.69 GHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain and power-added efficiency (PAE) with integrated power detector and shutdown functions. The MGA-43728 is ideal for use as a final stage PA for Small Cell base transceiver station (BTS) applications.
Component Image
(5.0 × 5.0 × 0.9) mm Package Outline
AVAGO 43728 YYWW XXXX
TOP VIEW
Pin Configuration
Notes: Package marking provides orientation and identification ”43728” = Device part number ”YYWW” = Year and work week ”XXXX” = Assembly lot number
28 Vdd1 27 Gnd 26 Vdd2 25 Gnd 24 Vdd3 23 Vdd3 22 Vdd3
Gnd 1 Gnd 2 NC 3 RFin 4 NC 5 Gnd 6 NC 7
(5.0 x 5.0 x 0.9) mm
21 Gnd 20 Gnd 19 RFout 18 RFout 17 RFout 16 Gnd 15 Gnd
Features
• High linearity performance : Typ -50 dBc ACPR1[1] at 27.0 dBm linear output power (biased with 5.0V supply)
• High Gain : 38.8 dB • Good efficiency • Fully matched • Built-in detector • GaAs E-pHEMT Technology [2] • Low cost small package size: (5.0 × 5.0 × 0.9) mm
Specifications
2.65 GHz; 5.0 V, Idqtotal = 350 mA (typ), LTE 10 MHz 50 RB • PAE : 13.4% • 27.0 dBm linear Pout @ ACPR1 = -50 dBc[1] • 38.3 dB Gain • Detector range : 20 dB
Applications
• Final stage high linearity amplifier for Picocell and Enterprise Femtocell PA targeted for small cell BTS downlink applications.
Note: 1. LTE 10MHz 50 RB Test Mode 1.1 downlink signal. 2. Enhancement mode technology employs positive VGS, thereby
eliminating the need of negative gate voltage associated with conventional depletion mode devices.
Functional Block Diagram
Vdd1 Vdd2
Vdd3
RFin
1st Stage 2nd Stage 3rd Stage
RFout
Vc1 8 Vc2 9 Vc3 10 Gnd 11 VddBias 12 Gnd 13 Vdet 14
Biasing Circuit Vc1 Vc2 Vc3 VddBias Vdet
Absolute Maximum Rating [1] TA=25°C
Symbol
Parameter
Vdd, VddBias Supply voltages, bias supply voltage
Vc Control Voltage
Pin,max Pdiss Tj
CW RF Input Power Total Power Dissipation [3] Junction Temperature
TSTG Storage Temperature
Units V V dBm W °C °C
Absolute Max. 6.0 (Vdd) 20 7.2 150 -65 to 150
Thermal Resistance [2,3]
qjc = 14 °C/W Notes: 1. Operation of this device in excess of any of
these limits may cause permanent damage. 2. Thermal resistance measured using Infra-
Red Measurement Technique at Vdd=5.5V operating voltage. 3. Board temperature (TB) is 25 °C , for TB > 49.2 °C derate the device power at 71.4 mW per °C rise in Board (package belly) temperature.
Electrical Specifications TA = 25 °C, Vdd1,2,3 = VddBias=5.0V, Idqtotal = 350mA, RF performance at 2.65 GHz, LTE 10MHz 50RB Test model 1.1 downlink signal operation unless otherwise stated.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Vdd Supply Voltage
V 5.0
Idqtotal
Quiescent Supply Current
mA 350 600
Gain Gain
dB 35 38.3
OP1dB
Output Power at 1dB Gain Compression
dBm 36
ACPR1 @ Pout=27.0 dBm LTE 10MHz 50RB Test Mode 1.1 downlink signal PAE Power Added Efficiency
dBc % 12
-50 13.4
S11 Input Return Loss, 50Ω source
dB 22
DetR
Detector RF dynamic range
dB 20
2fo
2fo Harmonics (LTE 10MHz 50RB Test Mode 1.1 downlink signal) dBc
-34
2
Product Consistency Distribution Charts [1]
LSL
LSL
35 36 37 38 39 40 41 Figure 1. Gain at Pout=27.0 dBm; LSL=35.0 dB, Nominal = 38.3dB
12 13 14 15 16 Figure 2. PAE at Pout=27.0 dBm; LSL=12.0% Nominal = 13.4%
600 650 700 750 800 850 Figure 3. Idd_Total at Pout=27.0 dBm, Nominal = 776 mA
900
-60 -56 -52 -48 -44 Figure 4. ACLR1 at Pout=27.0 dBm, Nominal = -50.0 dBc
-40
Note: 1. Distribution data sample size is 1700 samples taken from 3 different wafer lots. TA = 25*C, Vdd=VddBias = 5.0V, Vc1=2.2V, Vc2=2.0V, Vc3=2.2V, RF
performance at 2.65 GHz, unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.
3
MGA-43728 typical over-temperature performance at Vc1=2.2V, Vc2=2.0V, Vc3=2.2V as shown in Figure 27, unless
otherwise stated
S21,S11,S22/dB
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25 -30 -35 -40
–824550°°°CCC
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
S21,S11,S22/dB
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25 -30 -35
–824550°°°CCC
-40
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Frequency/GHz
Frequency/GHz
Figure 5. Small-signal performance Over-temperature Vdd=VddBias=5.0V operating voltage
Figure 6. Small-signal performance Over-temperature Vdd=VddBias=5.5V operating voltage
PAE/%
-36 21
-40 ACLR1_85 °C ACLR1_25 °C ACLR1_-40 °C
-44
PAE_85 °C
PAE_25 °C
PAE_-40 °C
18 15
ACLR1/dBc
-48 12
-52 9
-56 6
-60 3
-64 0 17 18 19 20 21 22 23 24 25 26 27 28 29 Pout/dBm
Figure 7. Over-temp.