2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V
• Small ...
2SC4702
Silicon
NPN Epitaxial
Application
High voltage amplifier
Features
High breakdown voltage VCEO = 300 V
Small Cob Cob = 1.5 pF Typ.
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “XV–”.
Preliminary Datasheet
R07DS0275EJ0500 Rev.5.00
Jan 10, 2014
1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 300 300 5 50 150 150
–55 to +150
(Ta = 25°C)
Unit V V V mA
mW °C °C
R07DS0275EJ0500 Rev.5.00 Jan 10, 2014
Page 1 of 6
2SC4702
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
300
—
—
V IC = 10 μA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 300
—
—
V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage
V(BR)EBO
5
—
—
V IE = 10 μA, IC = 0
Collector cutoff current
ICBO
—
—
0.1
μA VCB = 250 V, IE = 0
Collector to emitter saturation voltage
VCE(sat)
—
—
0.5
V IC = 30 mA, IB = 3 mA
DC current transfer ratio
hFE
60
—
150
VCE = 6 V, IC = 2 mA
Gain bandwidth product
fT
—
80
— MHz VCE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
1.5
—
pF VCB = 10 V, IE = 0, f = 1 MHz
R07DS0275EJ0500 Rev.5.00 Jan 10, 2014
Page 2 of 6
Collector Power Dissipation PC (mW)
2SC4...