SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4520
Features
Adoption of FBET, MBIT process. Large cu...
SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SC4520
Features
Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 1.5 3 1.3 150 -55 to +150 Unit V V V A A W
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Free Datasheet http://www.datasheet4u.com
SMD Type
2SC4520
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 3V, IC=0 VCE = 2V , IC = 100mA VCE = 2V , IC = 100mA VCB = 10V , f = 1.0MHz 100 Min
Transistors
Typ
Max 1 1 400
Unit ìA ìA
300 13 0.25 0.9 60 45 5 50 100 0.7 1.3
MHz pF V V V V V ns
VCE(sat) IC = 800 mA , IB = 40mA VBE(sat) IC = 800 mV , IB = 40mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton
Storage time
tstg
150
270
ns
Fall time
tf
180
350
ns
hFE Classification
Marking Rank hFE R 100 200 CK S 140 280 T 200 400
2
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