2SC4501S

2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 S Type 3 3 L Type Free Datasheet http://www.datasheet4u.com/ 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC* Tj Tstg 1 Ratings 30 30 7 3 4 10 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 7 — 2000 — — — — — — — Typ — — — — — — — — — 0.4 1.2 0.8 Max — — — 20 50000 1.5 2.0 2.0 3.5 — — — µs µs µs V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 1 mA, RBE = _ IE = 0.1 mA, IC = 0 VCB = 24 V, RBE = _ VCE = 3 V, IC = 1.5 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO hFE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sat) Turn on time Turn off time Storage time Note: 1. Pulse test. ton toff tstg IC = 1.5 A, IB = 3 mA* IC = 3 A, IB = 30 mA* 1 1 IC = 1.5 A, IB = 3 mA* IC = 3 A, IB = 30 mA* IC = 1.5 A, IB1 = –IB2 = 3 mA, VCC = 30 V 1 1 2 Free Datasheet http://www...