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2N3773

ON Semiconductor

NPN Power Transistors

2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head posit...


ON Semiconductor

2N3773

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Description
2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs This is a Pb−Free Device MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 2) VCEO VCEX VCBO VEBO IC 140 Vdc 160 Vdc 160 Vdc 7 Vdc Adc 16 30 Base Current − Continuous − Peak (Note 2) IB Adc 4 15 Total Power Dissipation @ TA = 25°C Derate above 25°C PD 150 0.855 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +200 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristic Symbol Max ...




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