SMD Type
Silicon NPN Epitaxial 2SC4155A
Transistors IC
Features
Small collector to emitter saturation voltage. VCE(sat...
SMD Type
Silicon
NPN Epitaxial 2SC4155A
Transistors IC
Features
Small collector to emitter saturation voltage. VCE(sat)=0.3max Excellent lineality of dc forward current gain. Supper mini package for easy mounting.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 6 200 150 125 –55 to +125 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-emitter break down voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Testconditons Min 50 0.1 0.1 120 820 0.3 200 4 15 V MHz pF dB Typ Max Unit V ìA ìA V(BR)CEO IC=100ìA,RBE= ICBO IEBO hFE VCB = 50 V, IE = 0 VEB = 4 V, IC = 0 VCE = 6 V, IC = 1 mA
VCE (sat) IC = 100 mA, IB = 10 mA fT Cob NF VCE = 6 V, IC = -10 mA VCB = 6 V, IE = 0, f = 1 MHz VCB = 6 V, IE = 0, f = 1 MHz, Rg=2kÙ
hFE Classification
Marking hFE HQ 120 270 HR 180 390 HS 270 560 HT 390 820
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Free Datasheet http://www.datasheet4u.com/
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