2SC3930W

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z High transition frequency fT. Optimum for RF amplification of FM/AM radios. z For high-frequency amplification complementary to 2SA1532. Production specification 2SC3930W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. 2SC3930W Marking VB/VC Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 30 20 5 30 150 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTF036 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Common emitter reverse transfer capacitance Noise figure Reverse transfer impedance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT Cre NF Zrb Test conditions IC=100μA,IE=0 IC=100μA,IB=0 IE=100μA,IC=0 VCB=10V,IE=0 VEB=5V,IC=0 VCE=10V,IC=1mA VCE=10V, IE= 1mA f=200MHz VCE=10V, IE= 1mA f=10.7MHz VCB=10V,IC=1mA,f=5MHz VCB=10V,IC=1mA,f=2MHz Production specification 2SC3930W MIN 30 20 5 0.1 0.1 70 150 1.5 4 50 220 MHz pF dB Ω TYP MAX ...