2SC3838

2SC3838 High-Frequency Amplifier Transistor NPN Silicon P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 MAXIMUM RATINGS (Ta=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 11 20 3.0 50 Unit V V V mA THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25°C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg Value 150 625 -55 to +150 Unit mW °C/W °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage(I C =1mA, IB =0) Collector-Base Breakdown Voltage(I C =10µA, IE =0) Emitter-Base Breakdown Voltage(IE =10µA, I C =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 11 Max 0.5 0.5 Unit V V V µA µA 20 3.0 - Collector Cufo Current(VCB =10V, IE =0) Emitter Cufo Current(VEB =2V, I C=0) 1. FR-5=1.0 I I0.75 I I0.062 in WEITRON http://www.weitron.com.tw 1/3 Rev.A 23-Jan-09 Free Datasheet http://www.datasheet4u.com/ 2SC3838 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain VCE=10V ,IC= 5mA Transition Frequency VCE=10V ,IC= 10mA, f=500MHz Collector-Emitter Saturation Voltage IC=-10 mA, IB=5mA Noise Factor VCE=6V, IC=2mA, f=500MHz hFE 27 1.4 270 0.5 4.0 GHz V dB fT VCE(sat) F CLASSIFICATION OF hFE Rank Range N 56-120 P 82-180 WEITRON http://ww...