2SC3734

SMD Type NPN Silicon Epitaxia 2SC3734 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High speed : tstg 200ns. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating 60 40 6 200 200 Unit V V V mA mW Junction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30V, IE=0 VEB = 3V, IC=0 VCE = 1V , IC = 10mA 75 200 0.12 0.8 300 510 3.0 4.0 70 100 200 250 Min Typ Max 100 100 300 0.3 0.95 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA fT Cob ton tstg toff VCE = 20V , IE = -10mA VCB = 5V , IE = 0 , f = 1.0MHz VCC = 3V , IC = 10mA , IB1 = -IB2 = 1mA hFE Classification Marking hFE B22 75 150 B23 100 200 B24 150 300 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ ...