isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3512
DESCRIPTION ·Low Noise and High Gain
NF = 1.6 dB TYP. @f ...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3512
DESCRIPTION ·Low Noise and High Gain
NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
11
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.6
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3512
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
ICEO
Collector Cutoff Current
VCE= 10V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
PG
Power Gain
IC= 20mA; VCE= 5V; f= 900MHz
NF
Noise Figure
IC= 5mA ; VCE= 5V; f= 900MHz
MIN TYP. MAX UNIT
15
V
1.0 μA
1.0 μA
1.0 μA
50
250
6.0
GHz
1.2 1.6 pF
10.5
dB
1.6
dB
NOTICE: ISC reserves...