isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3356
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., Ga...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3356
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.1
A
0.2
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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isc Silicon
NPN RF
Transistor
2SC3356
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= 1.0GHz
NF
Noise Figure
IC= 7mA ; VCE= 10V;f= 1.0GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
50
300
7
GHz
0.55 1.0 pF
11.5
dB
1.1 2.0 dB
hFE Classification
Class
Q
R
S
Marking R23
R24
R25
hFE
50-100 80-160 125-250
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