2SC3326

SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Small package. +0.1 0.38-0.1 +0.1 0.97-0.1 High DC current gain: hFE = 200 1200. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 150 125 -55 to +125 Unit V V V mA mA mW 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com SMD Type 2SC3326 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Switchingtime Turn-on time Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 200 0.042 0.61 30 4.8 160 1200 0.1 V V MHz 7 pF ns VCE (sat) IC = 30 mA, IB = 3 mA VBE fT Cob ton VCE = 2 V, IC = 4 mA VCE = 6 V, IC = 4 mA VCB = 10 V, IE = 0, f = 1 MHz Storage time tstg 500 ns Fall time tf 130 ...