SMD Type
Silicon NPN Epitaxial 2SC3325
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1...
SMD Type
Silicon
NPN Epitaxial 2SC3325
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). High voltage: VCEO = 50 V (min). Small package.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance * classification O: 25 (min), Y: 40 (min). Symbol ICBO IEBO hFE (1) Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 100 mA 70 25 0.1 0.8 300 7 0.25 1 V V MHz pF Min Typ Max 0.1 0.1 240 Unit ìA ìA
hFE (2) * VCE = 6 V, IC = 400 mA VCE (sat) IC = 100 mA, IB = 10 mA VBE fT Cob VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz
hFE Classification
Marking Rank hFE O 70 140 CE Y 120 240
+0.1 0.38-0.1
0-0.1
www.kexin.com.cn
1
Free Datasheet http://www.datasheet4u.com/
...