INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3125
DESCRIPTION ·Good Linearit...
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon
NPN RF
Transistor
2SC3125
DESCRIPTION ·Good Linearity of fT
APPLICATIONS ·Designed for TV Final Picture IF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
50
mA
IB
B
Base Current-Continuous
25
mA
PC
Collector Power Dissipation @TC=25℃
0.15
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature Range
-55~125
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon
NPN RF
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3125
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
25
V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
20
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
1.5
V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
1.1
1.6
pF
rbb’ CC
Base Time Constant
IC= 1mA ; VCB= 10V; f= 30MHz
25
ps
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
250
600
MHz
isc Website:www.iscsemi.cn
2
Free Datashe...