isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3124
DESCRIPTION ·High Gain Bandwidth Product
fT= 1100 MHz TYP...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC3124
DESCRIPTION ·High Gain Bandwidth Product
fT= 1100 MHz TYP. ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
25
mA
0.15
W
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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isc Silicon
NPN RF
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC3124
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0 μA
hFE
DC Current Gain
IC= 8mA ; VCE= 3V
40
200
fT
Current-Gain—Bandwidth Product
IC= 8mA ; VCE= 10V
650 1100
MHz
COB
Reverse Transfer Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.9 1.3 pF
rbb’ CC Base Time Constant
VCB= 10V,IC= 8 mA, f= 30 MHz
7
12
ps
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein ...
