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2SC3122
Silicon NPN RF Transistor
Description
INCHANGE Semiconductor isc RF Product Specification isc Silicon
NPN
RF
Transistor
2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collecto...
Inchange Semiconductor
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