SMD Type
Silicon NPN Epitaxial 2SC3074
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collecto...
SMD Type
Silicon
NPN Epitaxial 2SC3074
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector saturation voltage. High speed switching time.
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 60 50 5 5 1 1.0 20 150 -55 to +150 Unit V V V A A W W
3 .8 0
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Free Datasheet http://www.datasheet4u.com/
SMD Type
2SC3074
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V(BR)CEO hFE VCE (sat) VBE (sat) fT Cob ton Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz 50 70 30 Min
Transistors
Typ
Max 1 1
Unit ìA ìA V
240
0.2 0.9 120 80 0.1
0.4 1.2
V V MHz pF ìs
Storage time
tstg
1
ìs
Fall ti...