2SC2873

2SC2873 NPN Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES z Low saturation voltage z High speed switching time z Complementary to 2SA1213 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 5 2 500 150 -55-150 Units V V V A mW ℃ ℃ REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time CLASSIFICATION OF Rank Range Marking hFE(1) O 70-140 MO Y 120-240 MY VCE(sat) VBE(sat) fT Cob ton tstg tf VCC=30V, IC=1A, IB1=-IB2=0.05A VCE=2V, IC=2A IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 120 30 0.1 1.0 0.1 μs 40 0.5 1.2 V V MHz pF Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 Test conditions MIN 50 50 5 0.1 0.1 70 240 TYP MAX UNIT ...