2SC2736

SMD Type Silicon NPN Epitaxial 2SC2736 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Symbol Testconditons Min 30 20 3 500 0.7 30 200 1.0 1400 2200 22.5 10 4.0 300 200 pF MHz dB dB dB mV mV Typ Max Unit V V V nA V V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO VCB = 15V, IC = 0 VCE(sat) IC = 10 mA, IB = 5 mA hFE Cob fT CG1 VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 5 MA VCC = 12 V, IC = 2 mA,f = 200 MHz, fOSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA,f = 900 MHz, fOSC = 930 MHz (0dBm),fOut = 30 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, fOSC = 230 MHz (0dBm) VCC = 12 V, IC = 7 mA, f = 300 MHz VCC = 12 V, IC = 7 mA, fOSC = 930 MHz Conversion gain CG2 Noise figure Oscillating output voltage N...