INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2716
DESCRIPTION ·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability
APPLICATIONS ·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltag...
