2SC2715

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. Production specification 2SC2715 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2715 Marking RR1/RO1/RY1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 35 30 4 50 150 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC099 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Test conditions IC=10μA,IE=0 IC=1mA,IB=0 B Production specification 2SC2715 MIN 35 30 4 0.1 0.1 40 240 0.4 1 100 400 V V MHz TYP MAX UNIT V V V μA μA IE=10μA,IC=0 VCB=35V,IE=0 VEB=4V,IC=0 VCE=12V,IC=2mA IC=10mA, IB=1mA B IC=10mA, IB=1mA B VCE=10V, IC= 1mA CLASSIFICATION Rank Range Marking OF R 40-80 RR1 hFE(1) O 70-140 RO1 Y 120-240 RY1 ...