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2SC2415

Part Number	2SC2415
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 29, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 4...
Datasheet	2SC2415 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2415 · isc website：www.
iscsemi.
com...

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