DatasheetsPDF.com

2SC2414 Dataheets PDF



Part Number 2SC2414
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SC2414 Datasheet2SC2414 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A .

  2SC2414   2SC2414



Document
isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2414 · isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2414 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V Switching Times , Resistive Load ton Turn-On Time tstg Storage Time IC= 1A ;IB1= -IB2= 0.2A tf Fall Time MIN TYP. MAX UNIT 400 V 1.0 V 1.5 V 0.1 mA 0.1 mA 15 8 11 MHz 1 μs 3 μs 1 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


2SC2412WPT 2SC2414 2SC2415


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)