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1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
General Purpose Transistors
NPN Silicon
Pb-Free package is available design, excellent power dissipation offers • Batch process RoHS product for packing code suffix ”G” resistance. better reverse leakage current and thermal Low profile surface mounted application in order • Halogen free product for packing code suffix “H” to
optimize board space.
WILLAS
FM120-M+ 2SC2412KxLT1 THRU
Pb Free Product outline
SOD-123H 2SC2412KXLT1
0.146(3.7) 0.130(3.3)
FM1200-M+
declare that the material of product • We Features
Package compliance with RoHS requirements.
• Low power loss, high efficiency. ORDERING INFORMATION capability, low forward voltage drop. • High current • High surge capability. Marking Shipping Guardring for overvoltage protection. •Device Ultra high-speed switching. • 3000 Tape & Reel BQ 2SC2412KQLT1 • Silicon epitaxial planar chip, metal silicon junction. BR 3000 of Tape & Reel 2SC2412KRLT1 standards • Lead-free parts meet environmental
MIL-STD-19500 /228 2SC2412KSLT1 3000 Tape & Reel 1F suffix "G" code • RoHS product for packing G Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8) 0.056(1.4)
SOT– 23
Mechanical MAXIMUM RATINGS
data
0.040(1.0) 0.024(0.6) 0.031(0.8) Typ.
• Epoxy : UL94-V0 rated flame retardant Rating Symbol Value Unit • Case : Molded plastic, SOD-123H , 50 V Collector–Emitter Voltage V CEO • Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base Voltage Method 2026 V CBO 60 7.0 150 0.2 V V mAdc W
3 COLLECTOR
0.031(0.8) Typ.
• Polarity :Voltage Indicated by cathode band Emitter–Base V EBO
Position : Any • Mounting Collector Current — Continuous IC • Weight : Approximated 0.011 gram Collector power dissipation PC
Junction temperature MAXIMUM
Dimensions in inches and (millimeters)
1 BASE
2 EMITTER
150 °C T j AND ELECTRICAL RATINGS CHARACTERISTICS
Ratings at 25℃ ambient temperature unless specified. -55 ~+150 °C Storage temperature T stg otherwise Single phase half wave, 60Hz, resistive of inductive load. DEVICE MARKING For capacitive load, derate current by 20% 2SC2412KQLT1=BQ 2SC2412KRLT1 =BR 2SC2412KSLT1 =G1F SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS
Marking Code 12 13 noted.) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise 20 30 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage
Characteristic
VRMS VDC
Maximum DC Blocking Voltage
Collector–Emitter Breakdown Voltage
IO 1.0 Emitter–Base Breakdown Voltage 7 — — V V (BR)EBO (IE = 50Surge µA) Current 8.3 ms single half sine-wave Peak Forward 30 IFSM Collector–Base Breakdown Voltage superimposed on rated load (JEDEC method) 60 — — V V (BR)CBO (IC = 50 µResistance A) 40 Typical Thermal (Note 2) RΘJA — Collector Current Typical JunctionCutoff Capacitance (Note 1) CJ — 0.1 120 µA I CBO (VCB Temperature = 60 V) -55 to +125 -55 to +150 Operating Range TJ Emitter cutoff current - 65 to +1µ 7A 5 Storage Temperature Range TSTG — — 0.1 I EBO (VEB = 7 V) Collector-emitter saturation voltage H FM130-MH — FM140-MH FM150-M H FM160-M H FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL FM120-M — 0.4 H FM180-M V V CE(sat) (IC/ IForward / 5m A) 0.9 B = 50 mA Maximum Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 DC current transfer ratio h FE 120 –– 560 0.5 –– Maximum Average Reverse Current at @T A=25℃ IR = 6 V, IVoltage CE C= 1mA) 10 @T A=125℃ Rated(V DC Blocking Transition frequency — 180 –– MHz fT NOTES: (V CE = 12 V, I E= – 2mA, f =30MHz ) 1- Measured atcapacitance 1 MHZ and applied reverse voltage of 4.0 VDC. Output — 2.0 3.5 pF C ob 2- Thermal Resistance Junction to Ambient (V CB = 12 V, I From E= 0A, f =1MHz )
Maximum Average Forward Rectified Current
(IC = 1 mA)
Symbol 14 21 V 20 (BR)CEO 30
Min
14 40 28
50 40
15 50 Typ 35 — 50
16 60 Max 42 — 60
18 80 Unit 56 V80
10 100 70 100
115 150 105 150
120 200 140 200
V
V
V
A
A
℃
U
V
m
h FE values are classified as follows:
hFE
*
Q 120~270
R 180~390
S 270~560
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
Free Datasheet http://www.datasheet4u.com/
FM120-M+ 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
WILLAS
SOD-123+ PACKAGE
Pb Free Product
process emitter design, excellent power dissipation offers • Batch Fig.1 Grounded propagation characteristics better reverse leakage current and thermal resistance. profile surface mounted application in order to • Low 50 VCE= 6 V optimize board space. power loss, high efficiency. • Low 20 • High current capability, low forward voltage drop. 10 • High surge capability. 50 for overvoltage protection. • Guardring • Ultra high-speed switching. 2 epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free 1 MIL-STD-19500 /228 product for packing code suffix "G" 0.5 • R.