2SC2411K
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE FEATURES
• NPN epitaxial silicon,planar design • Collector-emi...
2SC2411K
NPN GENERAL PURPOSE SWITCHING
TRANSISTOR
VOLTAGE FEATURES
NPN epitaxial silicon,planar design Collector-emitter voltage VCE=32V Collector current IC=500mA In compliance with EU RoHS 2002/95/EC directives
32 Volts
POWER
225mW
MECHANICAL DATA
Case : SOT-23 plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.008 gram Marking : 241
ABSOLUTE RATINGS (TA=25oC)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Symbol VCEO VCBO VEBO IC
Value 32 40 5 500
Units V V V mA
THERMAL CHARACTERISTICS
Parameter M a x. P o w e r D i s s i p a t i o n ( N o t e 1 ) The r m a l R e s i s t a nc e , J unc t i o n t o A m b i e nt J u n c t i o n Te m p e r a t i o n S t o r a g e Te m p e r a t i o n
S ym b o l P TOT R θJ A TJ T S TG
Va l ue 225 556 -5 5 to +1 5 0 -5 5 to +1 5 0
U ni t s mW
O
C /W
O
C C
O
NOTE : 1.
Transistor mounted on FR-4 board 70 x 60 x 1mm
REV.0.1-DEC.31.2008
PAGE . 1
Free Datasheet http://www.datasheet4u.com/
2SC2411K
ELECTRICAL CHARACTERISTICS(TA=25oC)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 2) Collector-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE VCE(SAT) fT C ob
Conditions I C=100 µA I C=1mA I E=100µA VCB=20V VEB=4V VCE=3V,I C=100mA...