2SC2411K

SMD Type Medium Power Transistor 2SC2411K SOT-23 Transistors Unit: mm High ICMax. ICMax. = 0.5A +0.1 2.4-0.1 Low VCE(sat). Optimal for low voltage operation. NPN silicon transistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current * Collector power dissipation Junction temperature Storage temperature * PC must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 32 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC = 100ìA IC = 1mA IE = 100ìA VCB = 20V VEB = 4V VCE = 3V, IC = 100mA 120 Testconditons Min 40 32 5 1 1 390 0.6 6.5 250 V pF MHz Typ Max Unit V V V A A VCE(sat) IC/IB = 500mA/50mA Cob fT VCB = 10V, IE = 0A, f = 1MHz VCE = 5V, IE = -20mA, f = 100MHz hFE Classification Marking Rank hFE 120 CQ Q 270 180 CR R 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 Free Datasheet http://www.datasheet4u.com/ ...