2SC2411

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Production specification 2SC2411 Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor ORDERING INFORMATION Type No. 2SC2411 Marking CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 5 500 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC097 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions IC=100μA,IE=0 IC=1mA,IB=0 B Production specification 2SC2411 MIN 40 32 5 1 1 82 390 0.4 V TYP MAX UNIT V V V μA μA IE=100μA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=100mA IC=500mA, IB=50mA B Collector output capacitance Cob VCB=10V,IE=0 f=1MHz VCE=5V, IC= 20mA f=100MHZ 2.0 pF Transition frequency fT 250 MHz CLASSIFICATION Rank Range Marking OF hFE(1) P 82-180 CP Q 120-270 CQ R 180-390 CR ...