2SC1815-BL

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL NPN Silicon Epitaxial Transistor TO-92 A E Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking : C1815 x Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Operating and storage junction temperature range:-55oC to +125oC Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=0.1mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc,IC=0) Collector Cutoff Current (VCB=60Vdc, IE =0Adc) Collector Cutoff Current (VCB=50Vdc, IE =0Adc) Emitter Cutoff Current (VEB =5.0Vdc, IC=0Adc) DC Current Gain* (IC=2.0mAdc, V CE=6.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Voltage (IE=310mAdc) Transistor Frequency (IC=1.0mAdc, V CE=10Vdc, f=30MHz) O 70-140 Y 120-240 Min 50 60 5 0.1 0.1 0.1 Max Units Vdc Vdc B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO C Vdc uAdc uAdc uAdc D ...