2SC1623

SMD Type NPN Silicon Transistor 2SC1623 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA High Voltage: VCE O = 50 V +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Output capacitance Transiton Frequency *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 60V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1mA 90 200 0.15 0.86 0.55 0.62 3.0 250 Min Typ Max 0.1 0.1 600 0.3 1 0.65 V V V pF MHz Unit A A VCE(sat) IC = 100mA , IB = 10mA VBE(sat) IC = 100mA , IB = 10mA VBE Cob fT VCE = 6V , IC = 1mA VCB = 6V , IE = 0 , f = 1.0MHz VCE = 6V , IE = -10mA hFE Classification Marking hFE L4 90 to 180 L5 135 to 270 L6 200 to 400 L7 300 to 600 +0.1 0.38-0.1 0-0.1 www.kesenes.com www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SC1623 Typical Characteristics Transistors Diodes Fi...