2SB7 66
TRANSISTOR(PNP)
SOT-89
1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 MAXIMU...
2SB7 66
TRANSISTOR(
PNP)
SOT-89
1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -25 -5 -1 500 150 -55-150 Units V V V A mW ℃ ℃
2. COLLECTOR 3. EMITTER
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob VCE=-5V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz 50 -0.2 -0.85 200 20 30 -0.4 -1.2 V V MHz pF Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Test IC =-10μA, IE=0 IC =-2mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA 85 conditions MIN -30 -25 -5 -0.1 -0.1 340 TYP MAX UNIT V V V μA μA
CLASSIFICATION OF Rank Range Marking
1
hFE(1) Q 85-170 AQ R 120-240 AR S 170-340 AS
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
Date:2011/05
2SB7 66 Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
...