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2SB766

SeCoS

PNP Silicon Medium Power Transistor


Description
2SB766 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -30 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e...



SeCoS

2SB766

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