2SB1562

isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.6 A 25 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1562 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1562 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -20mA VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE=0 IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -2A ; VCE= -5V COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz MIN TYP. MAX UNIT -1.5 V -1.0 V -100 μA -100 μA 300 1000 100 60 pF Notice： ISC reserves the rights to make changes of the content herein th...