2SB1426

2SB1426 Elektronische Bauelemente -3A , -20V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 G H General Purpose Switching and Amplification J Emitter Base Collector D REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 CLASSIFICATION OF hFE Product-Rank Range 2SB1426-P 82~180 2SB1426-Q 120~270 2SB1426-R 180~390 K A B E C F A B C D E F G H J K Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -20 -20 -6 -3 0.75 166 150, -55~150 Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Collector-Base Capacitance Transition Frequency *Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Ccb fT * Min -20 -20 -6 82 - Typ 35 240 Max -0.1 -0.1 390 -0.5 - Unit V V V μA μA V pF MHz Test condition IC= -0.05mA, IE=0 IC= -1mA, IB=0 IE= -0.05...