2SB1424

2SB1 424 TRANSISTOR(PNP) SOT-89-3L FEATURES    Excellent DC Current Gain Low Collector-emitter saturation voltage Complement the 2SD2150 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -20 -6 -3 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions Min -20 -20 -6 -0.1 -0.1 120 35 240 390 -0.5 V pF MHz Typ Max Unit V V V µA µA IC=-50µA,IE=0 IC=-1mA,IB=0 IE=-50µA,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V, IC=-0.1A IC=-2A,IB=-0.1A VCB=-10V,IE=0, f=1MHz VCE=-2V,IC=-0.5A, f=100MHz CLASSIFICATION OF hFE RANK RANGE MARKING Q 120–270 AEQ R 180–390 AER JinYu semiconductor www.htsemi.com Free Datasheet http://www.datasheet4u.com/ ...