SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistor 2SB1396
Features
Adoption of FBET,MBIT processes Large cu...
SMD Type
Transistors
PNP Epitaxial Planar Silicon
Transistor 2SB1396
Features
Adoption of FBET,MBIT processes Large current capacity Low collector to emitter saturation voltage
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse) Collector dissipation * Junction temperature Storage temperature * Mounted on ceramic PCB (250mm X0.8mm)
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Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg
Rating -15 -10 -7 -3 -5 1.3 150 -55 to +150
Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Testconditons VCB = -12V, IE=0 VEB = -6V, IC=0 VCE =-2V , IC = -0.5A VCE =-2V , IC = -3A VCE =-2V , IC = -0.3A VCE = -10V , f=1MHz IC=-1.5A,IB=-30mA IC=-1.5A,IB=-30mA IC=-10ìA,IE=0 IC=-1mA,RBE= IE=-10ìA,IC=0 -15 -10 -7 140 70 400 26 -220 -0.9 -400 -1.2 GHz pF mV V V V V Min Typ Max -100 -100 560 Unit ìA ìA
hFE Classification
Marking Rank hFE S 140 280 BO T 200 400 U 280 560
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Free Datasheet http://www.datasheet4u.com/
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