PBSS5112PAP
30 November 2012
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Product data sheet
1. Product profile
1....
PBSS5112PAP
30 November 2012
120 V, 1 A
PNP/
PNP low VCEsat (BISS)
transistor
Product data sheet
1. Product profile
1.1 General description
PNP/
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/
PNP complement: PBSS4112PANP.
NPN/
NPN complement: PBSS4112PAN.
1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data
Table 1. Symbol Per
transistor VCEO IC ICM VEBO Per
transistor RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 440 mΩ collector-emitter voltage collector current peak collector current emitter-base voltage single pulse; tp ≤ 1 ms open collector open base -120 -1 -1.5 -7 V A A V Quick reference data Parameter Conditions Min Typ Max Unit
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NXP Semiconductors
PBSS5112PAP
120 V, 1 A
PNP/
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning inform...
